AN OPTICAL METHOD FOR THE QUALITY EXPLORATION OF A GaAs MATERIAL

Hatice Hilal KURT
3.632 911

Abstract


The explorations on the surface qualities of these materials become very important for the preparation of solar cells in PVs. Therefore a nondestructive optical testing method is proposed in this paper by using GaAs PV materials. The proposed method uses a gas ionization system (IS) together with an optical measurement tool powered by the fractal dimension analysis (OMT-FD). The method initially records the spatial distributed light emission intensity (SDLEI) data radiated from the IS including the PV material and applies OMT-FD to this data in order to find out the optical properties of the sample. Thus the efficiencies of the discharge light emission (DLE) intensities can be accurately and qualitatively investigated and the optical responses of charge carriers are determined for any external voltage range. It has been proven that OMT-FD results indicate a sharp increment above a certain external voltage to IS and gives a quality value for the PV cells under the appropriate external voltage value applied to the IS. The optimized parameter set for the testing system has been ascertained.


Keywords


gas discharge, semiconductor

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References


Jothilakshmi R, Ramakrishnan V, Kumar J, Saruac A, Kuballc M 2011 Micro-Raman analysis of GaAs Schottky barrier solar cell J. Raman Spectrosc. 42 422–428.

Subramanian B, Sanjeeviraja C 2002 Review of the photoelectrochemical Electrochem. 18 349-366. useful for Bull. cells

Dallas W, Polupan O, Ostapenko S 2007 Resonance ultrasonic vibrations for crack detection in photovoltaic silicon wafers Meas. Sci. & Technol. 18 852–858

Harada Y, Imura K, Okamoto H, Nishijima Y, Ueno K, Misawa H 2011 Plasmon-induced localphotocurrent changes in GaAs photovoltaic cells modified with gold nanospheres: A near-field imaging study J. Appl Phys .110 104306 -104306- 7.

Kundu S, Kumar A, Banerjee S, Banerji P 2012 Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer Mat Sci Semicon Proc. 15 386– 392.

Courel M, Rimada J C, Hernandez L 2012 An high approach GaAs/GaInNAs multiple quantum well and efficiencies using thin concentrators Acta Phys. Slovaca. 51 45-52. film structures for

Hacke P, Uesugi M, Matsuda S 1994 A study of the relationship between junction depth and GaAs solar cell performance under a 1 MeV electron fluence Solar Energy Materials and Solar Cells.35 113-119.

Zeng J J, Tsai C L, Lin YJ 2012 Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n- type GaAs Synthetic Metals. 162 1411– 1415.

Guo H, Wen L, Li X, Zhao Z, Wang Y 2011 Analysis of optical absorption in GaAs nanowire arrays Nanoscale Res Lett.6 617-623.

Czaban J A, Thompson D A, LaPierre R R 2008 GaAs core-shell nanowires for photovoltaic applications. Nano Lett. 9 148-157.

Colombo C, Hei M, Grätzel M, Fontcuberta A M 2009 Gallium arsenide p-in radial structure for photovoltaic applications. Appl Phys Lett. 94 73108-73113.

Garnett E, Yang P D 2010 Light trapping in silicon nanowire solar cells. Nano Lett.10 1082-1087.

Zhu J, Yu Z, Burkhard G F, Hsu C M, Connor S T, Xu Y, Wang Q, McGehee M, Fan S , Cui Y 2009 amorphous silicon nanowire and nanocone arrays. Nano Lett. 9 279-282. enhancement in

Hu L, Chen G 2007 Analysis of optical absorption in silicon nanowire arrays for photovoltaic applications Nano Lett. 7 3249 -3252.

Li J S, Yu H Y, Wong S M, Li X C, Zhang G, Lo G Q, Kwong D L 2009 Design guidelines of periodic Si nanowire arrays for solar cell application Appl Phys Lett.95 243113-24116.

Kurt H Y, Sadiq Y, Salamov B G 2008 Nonlinear electrical characteristics of semi-insulating GaAs Phys. Status. Solidi.A. 205 321-329.

Salamov B G, Kurt H Y 2005 Current instability in a planar gas discharge system with a large diameter semiconductor cathode J. Phys. D: Appl. Phys. 38 682-687.

Sadiq Y, Kurt H Y, Albarzanji A O, Alekperov S D, Salamov B G 2009 Transport properties in semiconductor-gas discharge electronic devices Solid-State Electron 53 1009-1015.

Kurt H, Cetin S, Salamov B G 2011 Townsend Instabilities in a Modified Discharge System With Coupled Narrow Gaps IEEE.Transaction on Plasma Science 39 1086-1091.

Kurt E, Kurt H, Bayhan U 2009 Ionization effects and linear stability in a coaxial plasma device Cent Eur J Phys.7 123-129.

Kurt H Y, Salamov B G 2007 Nonlinear transport of semi-insulating GaAs in a semiconductor gas discharge structure Physica Scripta. 76 641-648.

Kurt H Y, Kurt E, Salamov B G 2004 Fractal processing for an analysis of the quality and resistivity of large semiconductor plates Cryst. Res. Technol.39 743-753.

Salamov B G, Kurt H Y, Kurt E 2003 An analysis of the spatial homogeneity of a photodetector surface in an infrared image converter using the fractal dimension Imaging Sci J. 51 187-197.

Kurt H Y, Kurt E, Salamov B G 2006 Identification of the dynamics of plasma –induced damage in a CuInSe2 thin film by fractal processing Cryst. Res. Technol. 41 698-707.

Akos N, Miklos M, Laszlo D, Gyozo B 2002 Morphological electrochemically etched GaAs (001) surface Materials Science and Engineering B 90 67. the

Chen Z, Li Q, Pan D, Zhang H, Jiao Z, Wu M, Shek C H, Wu C M L, Lai J K L 2011 Polycondensation-type Ge nanofractal assembly Materialstoday. 14 106-113.

Stoliar P, Calo A, Valle F, Biscarini F 2010 Fabrication of Fractal Surfaces by Electron Beam Lithography, IEEE.Transaction on Nanotech.9 229 - 236.

Lam K T, Ji L W 2007 Fractal analysis of InGaN self-assemble quantum dots grown by MOCVD Microelectron J. 38 905–909.

Mandelbrot B B 1982 The Fractal Geometry of Nature (Freeman Press, San Francisco, CA)

Gangepain J J and Roques C 1986 Fractal approach to two-dimensional and three dimensional surface roughness Wear.109 119-126.